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FDS8949 - onsemi

Description: Max rDS(on) = 29mΩ at VGS = 10V; High performance trench technology for extremely low rDS(on); RoHS compliant; High power and current handling capability; Max rDS(on) = 36mΩ at VGS = 4.5V; Low gate charge

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FDS8949 - onsemi PCB footprint - Small Outline Packages - Small Outline Packages - SOIC8 CASE 751EB ISSUE A
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FDS8949 - onsemi  - 3D model - Small Outline Packages - SOIC8 CASE 751EB ISSUE A
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FDS8949 Details

  • Manufacturer Part Number:

    FDS8949

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOIC-8

  • Package Description:

    SO-8

  • Manufacturer Package Code:

    751EB

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    26 mJ

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    6 A

  • Drain-source On Resistance-Max:

    0.043 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2 W

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

FDS8949 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Keep the device away from heat sources and ensure good airflow.
  • Ensure the input voltage is within the recommended range (4.5V to 18V). Use a stable voltage regulator and decouple the input with a 10uF capacitor. Bias the gate with a 1kΩ resistor and a 10nF capacitor.
  • The maximum SOA is defined by the voltage and current ratings. Ensure the device operates within the recommended voltage range (4.5V to 18V) and current limit (1.5A).
  • Handle the device by the body, not the pins. Use an ESD wrist strap or mat. Store the device in an anti-static bag or tube. Avoid touching the pins or exposing the device to static-prone environments.
  • Use a gate driver IC (e.g., TC4420) with a 1kΩ resistor and a 10nF capacitor. Ensure the gate driver is capable of delivering the required current (up to 1.5A).

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FDS8949 Overview

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Part Image FDS8949_F085 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 6A I(D), 40V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image FDS8949_F085 onsemi

40V, 6.0A, 21mΩ, SO-8, Logic Level Dual N-Channel PowerTrench®, SO 8L NB, 5000-TAPE REEL