FDY1002PZ Model Download Search Results
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FDY1002PZ
onsemi
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1 | HBM ESD protection level = 1400 V (Note 3) ; Max rDS(on) = 0.5 Ω at VGS = –4.5 V, ID = –0.83 A; Max rDS(on) = 1.2 Ω at VGS = –1.8 V, ID = –0.43 A; RoHS Compliant; Max rDS(on) = 1.8 Ω at VGS = –1.5 V, ID = –0.36 A; Max rDS(on) = 0.7 Ω at VGS = –2.5 V, ID = –0.70 A | SO Transistor Flat Lead | FDY1002PZ |
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FDY1002PZ
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 0.83A I(D), P-Channel, Metal-oxide Semiconductor FET | FDY1002PZ |
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