FGH50T65SQD-F155 Model Download Search Results
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FGH50T65SQD-F155
onsemi
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1 | Maximum Junction Temperature: TJ =175°C; Positive Temperature Co-efficient for Easy Parallel Operating; High Current Capability; Low Saturation Voltage: VCE(sat) =1.6 V(Typ.) @ IC = 75 A; 100% of the Parts Tested for ILM(1); High Input Impedance; Fast Switching; Tighten Parameter Distribution; RoHS Compliant | Transistor Outline, Vertical | FGH50T65SQD-F155 |
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FGH50T65SQD_F155
Fairchild Semiconductor Corporation
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1 | Insulated Gate Bipolar Transistor | FGH50T65SQD_F155 |
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FGH50T65SQD_F155
onsemi
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1 | Insulated Gate Bipolar Transistor, 100A I(C), 650V V(BR)CES, N-Channel, TO-247AB | FGH50T65SQD_F155 |
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