FGL40N120ANDTU Model Download Search Results
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FGL40N120ANDTU
onsemi
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1 | High input impedance; High speed switching; Low saturation voltage : VCE(sat) = 2.6 V @ IC = 40A; Co-PAK, IGBT with FRD : trr = 75ns(typ.) | Transistor Outline, Vertical | FGL40N120ANDTU |
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FGL40N120ANDTU
Fairchild Semiconductor Corporation
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1 | Insulated Gate Bipolar Transistor, 64A I(C), 1200V V(BR)CES, N-Channel, TO-264AA | FGL40N120ANDTU |
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FGL40N120ANDTU_NL
Fairchild Semiconductor Corporation
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1 | Insulated Gate Bipolar Transistor, 64A I(C), 1200V V(BR)CES, N-Channel, TO-264AA | FGL40N120ANDTU_NL |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/to264_3.jpg"])
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