FJB102TM Model Download Search Results
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FJB102TM
onsemi
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1 | Industrial Use; High DC Current Gain : hFE=1000 @ VCE= 4 V, IC= 3 A (Min.); High Collector-Emitter Sustaining Voltage; Low Collector-Emitter Saturation Voltage; Monolithic Construction with Built-in Base-Emitter Shunt Resistors | Other | FJB102TM |
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FJB102TM
Rochester Electronics LLC
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1 | 8A, 100V, NPN, Si, POWER TRANSISTOR, D2PAK-3 | FJB102TM |
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FJB102TM
Fairchild Semiconductor Corporation
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1 | Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin | FJB102TM |
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