FJP21 Model Download Search Results
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FJP2145TU
onsemi
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1 | Wide RBSOA: Up to 1100 V; Low Equivalent On Resistance; Low Driving Capacitance, No Miller Capacitance; Very Fast Switch: 150 kHz; Low Switching Losses; Avalanche Rated; Reliable HV Switch: No False Triggering due to High dv/dt Transients | Transistor Outline, Vertical | FJP2145TU |
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FJP2160DTU
onsemi
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1 | Power Bipolar Transistor, 2A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin | FJP2160DTU |
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FJP2145TU
Fairchild Semiconductor Corporation
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1 | Power Bipolar Transistor, 5A I(C), 1-Element, NPN | FJP2145TU |
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FJP2160DTU
Fairchild Semiconductor Corporation
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1 | Power Bipolar Transistor, 2A I(C), 1-Element, NPN | FJP2160DTU |
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