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FJP2145TU
onsemi
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1 | Wide RBSOA: Up to 1100 V; Low Equivalent On Resistance; Low Driving Capacitance, No Miller Capacitance; Very Fast Switch: 150 kHz; Low Switching Losses; Avalanche Rated; Reliable HV Switch: No False Triggering due to High dv/dt Transients | Transistor Outline, Vertical | FJP2145TU |
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FJP2145TU
Fairchild Semiconductor Corporation
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1 | Power Bipolar Transistor, 5A I(C), 1-Element, NPN | FJP2145TU |
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