Part Image

FJP2145TU - onsemi

Description: Wide RBSOA: Up to 1100 V; Low Equivalent On Resistance; Low Driving Capacitance, No Miller Capacitance; Very Fast Switch: 150 kHz; Low Switching Losses; Avalanche Rated; Reliable HV Switch: No False Triggering due to High dv/dt Transients

Download FJP2145TU Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
FJP2145TU - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - FJP2145TU
click to zoom
3D Models
FJP2145TU - onsemi  - 3D model - Transistor Outline, Vertical - FJP2145TU
click to zoom

FJP2145TU Details

  • Manufacturer Part Number:

    FJP2145TU

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220-3

  • Manufacturer Package Code:

    340AT

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    2 Days

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Collector Current-Max (IC):

    5 A

  • Collector-Emitter Voltage-Max:

    800 V

  • Configuration:

    SINGLE WITH BUILT-IN FET AND DIODE

  • DC Current Gain-Min (hFE):

    8

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    125 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    120 W

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    28.4 MHz

FJP2145TU Frequently Asked Questions (FAQs)

  • A recommended PCB layout for optimal thermal performance would be to use a 2-layer or 4-layer board with a solid ground plane on the bottom layer, and to place thermal vias under the device to dissipate heat effectively.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions, use a suitable heat sink, and ensure good thermal conductivity between the device and the heat sink. Additionally, consider using a thermal interface material (TIM) to fill any gaps between the device and heat sink.
  • Critical parameters to monitor during operation to prevent overheating include the device junction temperature (Tj), case temperature (Tc), and power dissipation (PD). It's also essential to monitor the input voltage, current, and output voltage to ensure they are within the recommended operating conditions.
  • Yes, to minimize EMI/EMC issues, it's recommended to use a shielded layout, keep the device away from noise sources, and use a common-mode choke or ferrite bead on the input lines. Additionally, ensure that the PCB layout is designed to minimize radiation and conduction of electromagnetic interference.
  • To prevent damage, it's recommended to store the FJP2145TU in a dry, cool place, away from direct sunlight and moisture. Handle the device by the body, avoiding touching the leads or pins, and use an anti-static wrist strap or mat to prevent electrostatic discharge (ESD) damage.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

FJP2145TU Overview

Use the download button to access the FJP2145TU schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like FJP21, or try a keyword search, such as Power Bipolar Transistors

Parts related to FJP2145TU

Showing 0 results