FLL20 Model Download Search Results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	FLL200IB-2 FUJITSU Semiconductor Limited	1	RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET		FLL200IB-2	3D model not available Symbol and footprint not available 0	0 Build or Request
	FLL200IB-2 FUJITSU Limited	1	RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET		FLL200IB-2	3D model not available Symbol and footprint not available 0	0 Build or Request
	FLL200IB-3 SUMITOMO ELECTRIC Industries Ltd	1	RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET		FLL200IB-3	3D model not available Symbol and footprint not available 0	0 Build or Request
	FLL200IB-1 SUMITOMO ELECTRIC Industries Ltd	1	RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET		FLL200IB-1	3D model not available Symbol and footprint not available 0	0 Build or Request

	FLL200IB-3 FUJITSU Limited	1	RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET		FLL200IB-3	3D model not available Symbol and footprint not available 0	0 Build or Request
	FLL200IB-1 FUJITSU Semiconductor Limited	1	RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET		FLL200IB-1	3D model not available Symbol and footprint not available 0	0 Build or Request
	FLL200IB-2 SUMITOMO ELECTRIC Industries Ltd	1	RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET		FLL200IB-2	3D model not available Symbol and footprint not available 0	0 Build or Request
	FLL200IB-3 SUMITOMO ELECTRIC Device Innovations Inc	1	RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET		FLL200IB-3	3D model not available Symbol and footprint not available 0	0 Build or Request
	FLL200IB-2 SUMITOMO ELECTRIC Device Innovations Inc	1	Transistor		FLL200IB-2	3D model not available Symbol and footprint not available 0	0 Build or Request
	FLL200IB-1 SUMITOMO ELECTRIC Device Innovations Inc	1	RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET		FLL200IB-1	3D model not available Symbol and footprint not available 0	0 Build or Request
	FLL200IB-1 FUJITSU Limited	1	RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET		FLL200IB-1	3D model not available Symbol and footprint not available 0	0 Build or Request
	FLL200IB-3 FUJITSU Semiconductor Limited	1	RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET		FLL200IB-3	3D model not available Symbol and footprint not available 0	0 Build or Request

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