FMOSB Model Download Search Results
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FMOSB160N10-Q1
Formosa Microsemi Co Ltd
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1 | Power Field-Effect Transistor, 160A I(D), 100V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | FMOSB160N10-Q1 |
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FMOSBSS138W
Formosa Microsemi Co Ltd
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1 | Small Signal Field-Effect Transistor | FMOSBSS138W |
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FMOSB160N10-Q1-H
Formosa Microsemi Co Ltd
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1 | Power Field-Effect Transistor, 160A I(D), 100V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | FMOSB160N10-Q1-H |
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FMOSB35NM65-Q1-H
Formosa Microsemi Co Ltd
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1 | Power Field-Effect Transistor, 35A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | FMOSB35NM65-Q1-H |
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FMOSB35NM65-Q1
Formosa Microsemi Co Ltd
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1 | Power Field-Effect Transistor, 35A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | FMOSB35NM65-Q1 |
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FMOSBSS138W-H
Formosa Microsemi Co Ltd
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1 | Small Signal Field-Effect Transistor | FMOSBSS138W-H |
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