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FOD8318V onsemi
1 Use of P-Channel MOSFETs at output stage enables output voltage swing close to the supply rail (rail-to-rail output); DIN EN/IEC 60747-5-5,1,414 V (peak) workinginsulation voltage, 8000 V (peak) transient isolationvoltage ratings; User configurable: inverting, non-inverting, auto-reset,auto-shutdown; 2.5 A peak output current driving capability for most 1200 V/150A IGBT; 35 kV / μs Minimum Common Mode Rejection (VCM = 1500 VPK); Wide supply voltage range from 15V to 30V; High Speed; Desaturation detection; Small Outline Packages FOD8318V 1 Download Model
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FOD8318V Fairchild Semiconductor Corporation
1 Half Bridge Based MOSFET Driver, PDSO16 FOD8318V 0 Build or Request
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