FQA17 Model Download Search Results
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FQA170N06
onsemi
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1 | 170A, 60V RDS(on) = 5.6 mΩ(Max.) @VGS = 10 V, ID = 85 A; 100% avalanche tested; Low Crss ( Typ. 620pF); 175°C maximum junction temperature rating; Low gate charge ( Typ. 220nC) | Transistor Outline, Vertical | FQA170N06 |
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FQA17P10
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 18A I(D), 100V, 0.19ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | FQA17P10 |
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FQA17P10
Rochester Electronics LLC
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1 | 18A, 100V, 0.19ohm, P-CHANNEL, Si, POWER, MOSFET, TO-3P, 3 PIN | FQA17P10 |
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FQA17N40
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 17.2A I(D), 400V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | FQA17N40 |
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FQA17N40
Rochester Electronics LLC
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1 | 17.2A, 400V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PN, 3 PIN | FQA17N40 |
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FQA170N06
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 170A I(D), 60V, 0.0056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | FQA170N06 |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/to3p_3.jpg"])
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