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FQA170N06 - onsemi

Description: 170A, 60V RDS(on) = 5.6 mΩ(Max.) @VGS = 10 V, ID = 85 A; 100% avalanche tested; Low Crss ( Typ. 620pF); 175°C maximum junction temperature rating; Low gate charge ( Typ. 220nC)

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FQA170N06 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - FQA170N06
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FQA170N06 - onsemi  - 3D model - Transistor Outline, Vertical - FQA170N06
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FQA170N06 Details

  • Manufacturer Part Number:

    FQA170N06

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-3P-3L

  • Package Description:

    TO-3PN, 3 PIN

  • Manufacturer Package Code:

    340BZ

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    55 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    990 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    170 A

  • Drain-source On Resistance-Max:

    0.0056 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    810 pF

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    375 W

  • Pulsed Drain Current-Max (IDM):

    680 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    1400 ns

  • Turn-on Time-Max (ton):

    1580 ns

FQA170N06 Frequently Asked Questions (FAQs)

  • The maximum junction temperature of the FQA170N06 is 150°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 125°C for reliable operation.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 10°C/W is recommended. Additionally, ensure good airflow around the device and avoid blocking the heat sink fins.
  • The recommended gate drive voltage for the FQA170N06 is between 10V and 15V. This ensures reliable switching and minimizes the risk of false triggering.
  • Yes, the FQA170N06 is suitable for high-frequency switching applications up to 100 kHz. However, ensure that the gate drive circuitry is optimized for high-frequency operation and that the device is properly cooled.
  • Use a voltage clamp or a transient voltage suppressor (TVS) to protect the FQA170N06 from overvoltage. Additionally, implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.

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FQA170N06 Overview

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