FQA24N60 Model Download Search Results
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FQA24N60
onsemi
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1 | Low gate charge ( Typ. 110nC); Low Crss ( Typ. 56pF); 100% avalanche tested; 23.5A, 600V RDS(on) = 240mΩ(Max.) @VGS = 10 V, ID = 11.8A | Transistor Outline, Vertical | FQA24N60 |
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FQA24N60
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 23.5A I(D), 600V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | FQA24N60 |
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