FQB12 Footprint, Symbol and 3D Model search results

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Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
FQB12P20TM onsemi	1	Low Crss ( Typ. 30pF); Low gate charge ( Typ. 31nC); RoHS Compliant; -11.5A, -200V, RDS(on) = 470mΩ(Max.) @VGS = -10 V, ID = -5.75A; 100% avalanche tested	Other	FQB12P20TM	3D model not available Symbol and footprint available 2	1 Download Model
FQB12N60TM Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 10.5A I(D), 600V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		FQB12N60TM	3D model not available Symbol and footprint not available 0	0 Build or Request
FQB12P10 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 11.5A I(D), 100V, 0.29ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		FQB12P10	3D model not available Symbol and footprint not available 0	0 Build or Request
FQB12N60C Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 12A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FQB12N60C	3D model not available Symbol and footprint not available 0	0 Build or Request

FQB12P10TM Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 11.5A I(D), 100V, 0.29ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		FQB12P10TM	3D model not available Symbol and footprint not available 0	0 Build or Request
FQB12N20TM Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 11.6A I(D), 200V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		FQB12N20TM	3D model not available Symbol and footprint not available 0	0 Build or Request
FQB12N60CTM Rochester Electronics LLC	1	12A, 600V, 0.65ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, D2PAK-3		FQB12N60CTM	3D model not available Symbol and footprint not available 0	0 Build or Request
FQB12N60TM_AM002 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 10.5A I(D), 600V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		FQB12N60TM_AM002	3D model not available Symbol and footprint not available 0	0 Build or Request
FQB12N60TM Rochester Electronics LLC	1	10.5A, 600V, 0.7ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263, D2PAK-3		FQB12N60TM	3D model not available Symbol and footprint not available 0	0 Build or Request
FQB12P10TM Rochester Electronics LLC	1	11.5A, 100V, 0.29ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3		FQB12P10TM	3D model not available Symbol and footprint not available 0	0 Build or Request
FQB12N60CTM Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 12A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FQB12N60CTM	3D model not available Symbol and footprint not available 0	0 Build or Request
FQB12N20 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 11.6A I(D), 200V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		FQB12N20	3D model not available Symbol and footprint not available 0	0 Build or Request
FQB12N20LTM Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 11.6A I(D), 200V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		FQB12N20LTM	3D model not available Symbol and footprint not available 0	0 Build or Request
FQB12N60 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 10.5A I(D), 600V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		FQB12N60	3D model not available Symbol and footprint not available 0	0 Build or Request
FQB12N50 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 12.1A I(D), 500V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FQB12N50	3D model not available Symbol and footprint not available 0	0 Build or Request

FQB12N20L Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 11.6A I(D), 200V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		FQB12N20L	3D model not available Symbol and footprint not available 0	0 Build or Request
FQB12P20TM_SB82075 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 11.5A I(D), 200V, 0.47ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		FQB12P20TM_SB82075	3D model not available Symbol and footprint not available 0	0 Build or Request
FQB12P20TM Rochester Electronics LLC	1	11.5A, 200V, 0.47ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, LEAD FREE, D2PAK-3		FQB12P20TM	3D model not available Symbol and footprint not available 0	0 Build or Request
FQB12P20 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 11.5A I(D), 200V, 0.47ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		FQB12P20	3D model not available Symbol and footprint not available 0	0 Build or Request
FQB12P20 onsemi	1	Power Field-Effect Transistor, 11.5A I(D), 200V, 0.47ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET		FQB12P20	3D model not available Symbol and footprint not available 0	0 Build or Request
FQB12P20TM_NL Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 11.5A I(D), 200V, 0.47ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		FQB12P20TM_NL	3D model not available Symbol and footprint not available 0	0 Build or Request
FQB12P20TM Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 11.5A I(D), 200V, 0.47ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		FQB12P20TM	3D model not available Symbol and footprint not available 0	0 Build or Request
GET24LFQB12GVE AMD	1	SoC, CMOS, PBGA413		GET24LFQB12GVE	3D model not available Symbol and footprint not available 0	0 Build or Request

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