FQB14 Model Download Search Results
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FQB14N30TM
Rochester Electronics LLC
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1 | 14.4A, 300V, 0.29ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3 | FQB14N30TM |
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FQB14N15TM
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 14.4A I(D), 150V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | FQB14N15TM |
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FQB14N15
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 14.4A I(D), 150V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | FQB14N15 |
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FQB14N30TM
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 14.4A I(D), 300V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | FQB14N30TM |
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FQB14N30
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 14.4A I(D), 300V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | FQB14N30 |
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FQB140N03LTM
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 140A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | FQB140N03LTM |
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FQB14N03L
Fairchild Semiconductor Corporation
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1 | Transistor | FQB14N03L |
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FQB140N03L
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 140A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | FQB140N03L |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/d2pak_3.jpg"])
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