FQB1N Model Download Search Results
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FQB1N60
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 1.2A I(D), 600V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | FQB1N60 |
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FQB1N60TM
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 1.2A I(D), 600V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | FQB1N60TM |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/d2pak_3.jpg"])
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