FQB22 Model Download Search Results
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FQB22P10TM
onsemi
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1 | 175°C maximum junction temperature rating; Low Crss ( Typ. 160pF); -22A, -100V, RDS(on) =125mΩ(Max.) @VGS = -10 V, ID = -11A; Low gate charge ( Typ.40nC); 100% avalanche tested | Other | FQB22P10TM |
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FQB22N30
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 21A I(D), 300V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | FQB22N30 |
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FQB22P10TM_NL
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 22A I(D), 100V, 0.125ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | FQB22P10TM_NL |
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FQB22P10TM
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 22A I(D), 100V, 0.125ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | FQB22P10TM |
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FQB22P10
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 22A I(D), 100V, 0.125ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | FQB22P10 |
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FQB22P10TM_F085
onsemi
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1 | -100V, -22A, 125mΩ, D2PAK P-Channel QFET®, TO-263 2L (D2PAK), 6400-TAPE REEL | FQB22P10TM_F085 |
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FQB22P10TM_F085
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 22A I(D), 100V, 0.125ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | FQB22P10TM_F085 |
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FQB22P10TM-F085
onsemi
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1 | 100V P-Channel QFET® -22A, 125mΩ | FQB22P10TM-F085 |
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FQB22P10
onsemi
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1 | MOSFET QF -100V 125MOHM D2PAK | FQB22P10 |
1
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/d2pak_3.jpg"])
![Part Image](["https://componentsearchengine.com/Images/9/FQB22P10TM-F085.jpg",null,null])
![Part Image](["https://componentsearchengine.com/Images/1/FQB22P10.jpg",null,null])
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