FQB27 Model Download Search Results
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FQB27P06TM
onsemi
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1 | Low gate charge ( Typ.33nC); 100% avalanche tested; Low Crss ( Typ. 120pF); 175°C maximum junction temperature rating; -27A, -60V, RDS(on) =70mΩ(Max.) @VGS = -10 V, ID = -13.5A | Other | FQB27P06TM |
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FQB27N25TM
Rochester Electronics LLC
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1 | 25.5A, 250V, 0.11ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263, D2PAK-3 | FQB27N25TM |
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FQB27N25TM
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 25.5A I(D), 250V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | FQB27N25TM |
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FQB27P06TM
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 27A I(D), 60V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | FQB27P06TM |
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FQB27N25
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 25.5A I(D), 250V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | FQB27N25 |
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FQB27N25TM_F085
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 25.5A I(D), 250V, 0.131ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT PACKAGE-3/2 | FQB27N25TM_F085 |
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FQB27P06
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 27A I(D), 60V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | FQB27P06 |
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FQB27N25TM-F085
onsemi
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1 | N-Channel UltraFET® 250V, 25.5A, 131mΩ, TO-263 2L (D2PAK), 800-REEL, Automotive Qualified | FQB27N25TM-F085 |
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FQB27N25TM_F085
onsemi
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1 | 250V, 26A, 108mΩ, D2PAK N-Channel UltraFET®, TO-263 2L (D2PAK), 800-TAPE REEL | FQB27N25TM_F085 |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/d2pak_3.jpg"])
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