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FQD10N20LTM
onsemi
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1 | 100% Avalanche Tested; Low Crss ( Typ. 14pF); 7.6A, 200V, RDS(on) = 360mΩ @VGS = 10 V, ID = 3.8A; Low Level Gate Drive Requirement Allowing Direct Operation From Logic Drivers; Low Gate Charge (Typ. 13nC) | Other | FQD10N20LTM |
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FQD10N20LTM
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 7.6A I(D), 200V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | FQD10N20LTM |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/to252_3.jpg"])
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