FQD17 Model Download Search Results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	FQD17P06TM onsemi	1	-12A, -60V, RDS(on) = 135mΩ(Max.) @VGS = -10 V, ID = -6A; Low gate charge ( Typ. 21nC); Low Crss ( Typ. 80pF); 100% avalanche tested	Other	FQD17P06TM	3D model available Symbol and footprint available 3	1 Download Model
	FQD17N08LTF Rochester Electronics LLC	1	12.9A, 80V, 0.115ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3		FQD17N08LTF	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQD17N08TF Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 12.9A I(D), 80V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252		FQD17N08TF	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQD17N08L Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 12.9A I(D), 80V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252		FQD17N08L	3D model not available Symbol and footprint not available 0	0 Build or Request

	FQD17N08LTM Rochester Electronics LLC	1	12.9A, 80V, 0.115ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3		FQD17N08LTM	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQD17N08TM Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 12.9A I(D), 80V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252		FQD17N08TM	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQD17P06TF_NL Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 12A I(D), 60V, 0.135ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252		FQD17P06TF_NL	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQD17N08 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 12.9A I(D), 80V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252		FQD17N08	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQD17N08LTF Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 12.9A I(D), 80V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252		FQD17N08LTF	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQD17P06TF Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 12A I(D), 60V, 0.135ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252		FQD17P06TF	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQD17N08LTM onsemi	1	Power Field-Effect Transistor, 12.9A I(D), 80V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252		FQD17N08LTM	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQD17N08LTM Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 12.9A I(D), 80V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252		FQD17N08LTM	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQD17P06TM Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 12A I(D), 60V, 0.135ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252		FQD17P06TM	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQD17P06 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 12A I(D), 60V, 0.135ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252		FQD17P06	3D model not available Symbol and footprint not available 0	0 Build or Request

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