FQD5P10TM Model Download Search Results
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FQD5P10TM
onsemi
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1 | Low gate charge ( Typ. 6.3nC); 100% avalanche tested; -3.6A, -100V, RDS(on) = 1.05Ω(Max.) @VGS = -10 V, ID = -1.8A; Low Crss ( Typ. 18pF) | Other | FQD5P10TM |
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FQD5P10TM
Rochester Electronics LLC
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1 | 3.6A, 100V, 1.05ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 | FQD5P10TM |
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FQD5P10TM
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 3.6A I(D), 100V, 1.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | FQD5P10TM |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/to252_3.jpg"])
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