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Part Number	D.S	Description	Prices / Stock	Model	Action
FQI6N60CTU Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 5.5A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	FQI6N60CTU	3D model not available Symbol and footprint not available 0	0 Build or Request
FQI6N70 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 6.2A I(D), 700V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA	FQI6N70	3D model not available Symbol and footprint not available 0	0 Build or Request
FQI6N60 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 6.2A I(D), 600V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA	FQI6N60	3D model not available Symbol and footprint not available 0	0 Build or Request
FQI6N80 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 5.8A I(D), 800V, 1.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA	FQI6N80	3D model not available Symbol and footprint not available 0	0 Build or Request

FQI6N40C Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 6A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, I2PAK-3	FQI6N40C	3D model not available Symbol and footprint not available 0	0 Build or Request
FQI6N60CTU Rochester Electronics LLC	1	5.5A, 600V, 2ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, I2PAK-3	FQI6N60CTU	3D model not available Symbol and footprint not available 0	0 Build or Request
FQI6N80TM Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor	FQI6N80TM	3D model not available Symbol and footprint not available 0	0 Build or Request
FQI6N60C Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 5.5A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	FQI6N60C	3D model not available Symbol and footprint not available 0	0 Build or Request
FQI6N50TU Rochester Electronics LLC	1	5.5A, 500V, 1.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, I2PAK-3	FQI6N50TU	3D model not available Symbol and footprint not available 0	0 Build or Request
FQI6N25TU Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 5.5A I(D), 250V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA	FQI6N25TU	3D model not available Symbol and footprint not available 0	0 Build or Request
FQI6N40CTU Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 6A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	FQI6N40CTU	3D model not available Symbol and footprint not available 0	0 Build or Request
FQI6N15 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 6.4A I(D), 150V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA	FQI6N15	3D model not available Symbol and footprint not available 0	0 Build or Request
FQI6N15TU Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 6.4A I(D), 150V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA	FQI6N15TU	3D model not available Symbol and footprint not available 0	0 Build or Request
FQI6N90TU Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 5.8A I(D), 900V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA	FQI6N90TU	3D model not available Symbol and footprint not available 0	0 Build or Request
FQI6N90 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 5.8A I(D), 900V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA	FQI6N90	3D model not available Symbol and footprint not available 0	0 Build or Request

FQI6N40 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 5.5A I(D), 400V, 1.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA	FQI6N40	3D model not available Symbol and footprint not available 0	0 Build or Request
FQI6N80TU Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 5.8A I(D), 800V, 1.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA	FQI6N80TU	3D model not available Symbol and footprint not available 0	0 Build or Request
FQI6N45 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 6.2A I(D), 450V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA	FQI6N45	3D model not available Symbol and footprint not available 0	0 Build or Request
FQI6N70TU Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 6.2A I(D), 700V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3	FQI6N70TU	3D model not available Symbol and footprint not available 0	0 Build or Request
FQI6N40TU Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 5.5A I(D), 400V, 1.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA	FQI6N40TU	3D model not available Symbol and footprint not available 0	0 Build or Request
FQI6N45TU Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 6.2A I(D), 450V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA	FQI6N45TU	3D model not available Symbol and footprint not available 0	0 Build or Request
FQI6N25 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 5.5A I(D), 250V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA	FQI6N25	3D model not available Symbol and footprint not available 0	0 Build or Request
FQI6N50TU Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 5.5A I(D), 500V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA	FQI6N50TU	3D model not available Symbol and footprint not available 0	0 Build or Request
FQI6N50 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 5.5A I(D), 500V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA	FQI6N50	3D model not available Symbol and footprint not available 0	0 Build or Request
FQI6N60TU Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 6.2A I(D), 600V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA	FQI6N60TU	3D model not available Symbol and footprint not available 0	0 Build or Request

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