FQP17N40 Model Download Search Results
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FQP17N40
onsemi
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1 | 16A, 400V, RDS(on) = 270mΩ(Max.) @VGS = 10 V, ID = 8A; 100% avalanche tested; Low gate charge ( Typ. 45nC); Low Crss ( Typ. 30pF) | Transistor Outline, Vertical | FQP17N40 |
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FQP17N40
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 16A I(D), 400V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | FQP17N40 |
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FQP17N40J69Z
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 16A I(D), 400V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | FQP17N40J69Z |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/to220ab_3.jpg"])
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