FQP47 Model Download Search Results
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FQP47P06
onsemi
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1 | -47A, -60V, RDS(on) = 26mΩ(Max.) @VGS = -10 V, ID = -23.5A; 100% avalanche tested; Low Crss ( Typ. 320pF); Low gate charge ( Typ. 84nC); 175°C maximum junction temperature rating | Transistor Outline, Vertical | FQP47P06 |
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FQP47P06J69Z
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 47A I(D), 60V, 0.026ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | FQP47P06J69Z |
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FQP47P06
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 47A I(D), 60V, 0.026ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | FQP47P06 |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/to220ab_3.jpg"])
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