FQP7P Model Download Search Results
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FQP7P06
onsemi
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1 | 175°C maximum junction temperature rating; -7A, -60V, RDS(on) = 410mΩ(Max.) @VGS = -10 V, ID = -3.5A; Low Crss ( Typ. 25pF); Low gate charge ( Typ. 6.3nC); 100% avalanche tested | Transistor Outline, Vertical | FQP7P06 |
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FQP7P20J69Z
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 7.3A I(D), 200V, 0.69ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | FQP7P20J69Z |
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FQP7P06
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 7A I(D), 60V, 0.41ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | FQP7P06 |
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FQP7P20
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 7.3A I(D), 200V, 0.69ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | FQP7P20 |
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FQP7P20
Rochester Electronics LLC
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1 | 7.3A, 200V, 0.69ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | FQP7P20 |
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FQP7P06J69Z
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 7A I(D), 60V, 0.41ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | FQP7P06J69Z |
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FQP7P06_NL
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 7A I(D), 60V, 0.41ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | FQP7P06_NL |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/to220ab_3.jpg"])
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