FQP7P06 Model Download Search Results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	FQP7P06 onsemi	1	175°C maximum junction temperature rating; -7A, -60V, RDS(on) = 410mΩ(Max.) @VGS = -10 V, ID = -3.5A; Low Crss ( Typ. 25pF); Low gate charge ( Typ. 6.3nC); 100% avalanche tested	Transistor Outline, Vertical	FQP7P06	3D model available Symbol and footprint available 3	1 Download Model
	FQP7P06 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 7A I(D), 60V, 0.41ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		FQP7P06	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQP7P06J69Z Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 7A I(D), 60V, 0.41ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		FQP7P06J69Z	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQP7P06_NL Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 7A I(D), 60V, 0.41ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		FQP7P06_NL	3D model not available Symbol and footprint not available 0	0 Build or Request

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