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FQPF11P06
onsemi
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1 | 175°C maximum junction temperature rating; Low gate charge ( Typ. 13nC); Low Crss ( Typ. 45pF); 100% avalanche tested; -8.6A, -60V, RDS(on) = 175mΩ(Max.) @VGS = -10 V, ID = -4.3A | Transistor Outline, Vertical | FQPF11P06 |
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FQPF11P06
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 8.6A I(D), 60V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | FQPF11P06 |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/to220ab_3.jpg"])
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