FSGYC Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Prices / Stock	Model	Action
	FSGYC260D1 Intersil Corporation	1	Power Field-Effect Transistor, 56A I(D), 200V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	FSGYC260D1	3D model not available Symbol and footprint not available 0	0 Build or Request
	FSGYC260R4 International Rectifier	1	Power Field-Effect Transistor, 56A I(D), 200V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	FSGYC260R4	3D model not available Symbol and footprint not available 0	0 Build or Request
	FSGYC063R3 International Rectifier	1	Power Field-Effect Transistor, 70A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	FSGYC063R3	3D model not available Symbol and footprint not available 0	0 Build or Request
	FSGYC164D1 International Rectifier	1	Power Field-Effect Transistor, 69A I(D), 150V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	FSGYC164D1	3D model not available Symbol and footprint not available 0	0 Build or Request

	FSGYC264R4 International Rectifier	1	Power Field-Effect Transistor, 44A I(D), 250V, 0.048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	FSGYC264R4	3D model not available Symbol and footprint not available 0	0 Build or Request
	FSGYC260R3 Intersil Corporation	1	Power Field-Effect Transistor, 56A I(D), 200V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	FSGYC260R3	3D model not available Symbol and footprint not available 0	0 Build or Request
	FSGYC164R3 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 69A I(D), 150V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	FSGYC164R3	3D model not available Symbol and footprint not available 0	0 Build or Request
	FSGYC160R3 International Rectifier	1	Power Field-Effect Transistor, 70A I(D), 100V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	FSGYC160R3	3D model not available Symbol and footprint not available 0	0 Build or Request
	FSGYC065R4 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 70A I(D), 60V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	FSGYC065R4	3D model not available Symbol and footprint not available 0	0 Build or Request
	FSGYC160D1 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 70A I(D), 100V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	FSGYC160D1	3D model not available Symbol and footprint not available 0	0 Build or Request
	FSGYC260R3 International Rectifier	1	Power Field-Effect Transistor, 56A I(D), 200V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	FSGYC260R3	3D model not available Symbol and footprint not available 0	0 Build or Request
	FSGYC063R4 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 70A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	FSGYC063R4	3D model not available Symbol and footprint not available 0	0 Build or Request
	FSGYC065R3 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 70A I(D), 60V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	FSGYC065R3	3D model not available Symbol and footprint not available 0	0 Build or Request
	FSGYC164R4 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 69A I(D), 150V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	FSGYC164R4	3D model not available Symbol and footprint not available 0	0 Build or Request
	FSGYC063R4 International Rectifier	1	Power Field-Effect Transistor, 70A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	FSGYC063R4	3D model not available Symbol and footprint not available 0	0 Build or Request

	FSGYC164R3 International Rectifier	1	Power Field-Effect Transistor, 69A I(D), 150V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	FSGYC164R3	3D model not available Symbol and footprint not available 0	0 Build or Request
	FSGYC264D1 Intersil Corporation	1	Power Field-Effect Transistor, 44A I(D), 250V, 0.048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	FSGYC264D1	3D model not available Symbol and footprint not available 0	0 Build or Request
	FSGYC260R4 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 56A I(D), 200V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	FSGYC260R4	3D model not available Symbol and footprint not available 0	0 Build or Request
	FSGYC264R3 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 44A I(D), 250V, 0.048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	FSGYC264R3	3D model not available Symbol and footprint not available 0	0 Build or Request
	FSGYC065R3 International Rectifier	1	Power Field-Effect Transistor, 70A I(D), 60V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	FSGYC065R3	3D model not available Symbol and footprint not available 0	0 Build or Request
	FSGYC065D1 International Rectifier	1	Power Field-Effect Transistor, 70A I(D), 60V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	FSGYC065D1	3D model not available Symbol and footprint not available 0	0 Build or Request
	FSGYC164D1 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 69A I(D), 150V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	FSGYC164D1	3D model not available Symbol and footprint not available 0	0 Build or Request
	FSGYC260R3 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 56A I(D), 200V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	FSGYC260R3	3D model not available Symbol and footprint not available 0	0 Build or Request
	FSGYC264R3 International Rectifier	1	Power Field-Effect Transistor, 44A I(D), 250V, 0.048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	FSGYC264R3	3D model not available Symbol and footprint not available 0	0 Build or Request
	FSGYC260D1 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 56A I(D), 200V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	FSGYC260D1	3D model not available Symbol and footprint not available 0	0 Build or Request
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