FSJ92 Footprint, Symbol and 3D Model search results

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Part Number	D.S	Description	Prices / Stock	Model	Action
FSJ9260R4 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 27A I(D), 200V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA	FSJ9260R4	3D model not available Symbol and footprint not available 0	0 Build or Request
FSJ9260R1 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 27A I(D), 200V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA	FSJ9260R1	3D model not available Symbol and footprint not available 0	0 Build or Request
FSJ9260R3 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 27A I(D), 200V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA	FSJ9260R3	3D model not available Symbol and footprint not available 0	0 Build or Request
FSJ9260D1 Intersil Corporation	1	Power Field-Effect Transistor, 27A I(D), 200V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA	FSJ9260D1	3D model not available Symbol and footprint not available 0	0 Build or Request

FSJ9260D1 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 27A I(D), 200V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA	FSJ9260D1	3D model not available Symbol and footprint not available 0	0 Build or Request
FSJ9260D3 Intersil Corporation	1	Transistor	FSJ9260D3	3D model not available Symbol and footprint not available 0	0 Build or Request
FSJ9260R4 Intersil Corporation	1	Power Field-Effect Transistor, 27A I(D), 200V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA	FSJ9260R4	3D model not available Symbol and footprint not available 0	0 Build or Request
FSJ9260D1 International Rectifier	1	Power Field-Effect Transistor, 27A I(D), 200V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA	FSJ9260D1	3D model not available Symbol and footprint not available 0	0 Build or Request
FSJ9260R3 Harris Semiconductor	1	Power Field-Effect Transistor, 27A I(D), 200V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA	FSJ9260R3	3D model not available Symbol and footprint not available 0	0 Build or Request
FSJ9260D1 Harris Semiconductor	1	Power Field-Effect Transistor, 27A I(D), 200V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA	FSJ9260D1	3D model not available Symbol and footprint not available 0	0 Build or Request
FSJ9260R1 Harris Semiconductor	1	Power Field-Effect Transistor, 27A I(D), 200V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA	FSJ9260R1	3D model not available Symbol and footprint not available 0	0 Build or Request
FSJ9260R4 International Rectifier	1	Power Field-Effect Transistor, 27A I(D), 200V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA	FSJ9260R4	3D model not available Symbol and footprint not available 0	0 Build or Request
FSJ9260R3 International Rectifier	1	Power Field-Effect Transistor, 27A I(D), 200V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA	FSJ9260R3	3D model not available Symbol and footprint not available 0	0 Build or Request
FSJ9260R4 Harris Semiconductor	1	Power Field-Effect Transistor, 27A I(D), 200V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA	FSJ9260R4	3D model not available Symbol and footprint not available 0	0 Build or Request
FSJ9260D3 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 27A I(D), 200V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA	FSJ9260D3	3D model not available Symbol and footprint not available 0	0 Build or Request

FSJ9260R3 Intersil Corporation	1	Power Field-Effect Transistor, 27A I(D), 200V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA	FSJ9260R3	3D model not available Symbol and footprint not available 0	0 Build or Request
FSJ9260D3 Harris Semiconductor	1	Power Field-Effect Transistor, 27A I(D), 200V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA	FSJ9260D3	3D model not available Symbol and footprint not available 0	0 Build or Request
FSJ9260R1 Intersil Corporation	1	Power Field-Effect Transistor, 27A I(D), 200V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA	FSJ9260R1	3D model not available Symbol and footprint not available 0	0 Build or Request

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