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GANE011-080CBAZ
Nexperia
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1 | AEC-Q101 qualified 80 V, 11 mOhm Gallium Nitride (GaN) FET in a 1.5 mm x 1.5 mm Wafer Level Chip-Scale Package (WLCSP) | Other | GANE011-080CBAZ |
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GANE011-080CBA
Nexperia
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1 | Power Field-Effect Transistor | GANE011-080CBA |
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![Part Image](["https://componentsearchengine.com/2D/0T/21263589.2.4.png",null,null])
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