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Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
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GB01SLT12-214
GeneSiC Semiconductor
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1 | GENESIC SEMICONDUCTOR - GB01SLT12-214 - Silicon Carbide Schottky Diode, MPS Series, Single, 1.2 kV, 1 A, 4 nC, DO-214 | Other | GB01SLT12-214 |
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GB01SLT12-214
GeneSic Semiconductor Inc
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1 | Silicon Carbide (SiC) Merged PiN Schottky (MPS) Diode 1200V 1A DO-214; Mounting Style: Surface Mount; Package / Case: DO-214; Packaging: Tape & Reel; Factory Pack Quantity: 2500; Configuration: Single; Repetitive Reverse Voltagen(VRRM): 1200 V; Forward Currentn(IF): 1 A; Forward Voltagen(VF): 1.5 V @ 1 A; Reverse Currentn(IR): 0.1 uA @ 1200 V; Total Capacitive Charge (QC): 4 nC; Capacitancen(C): 71 pF @ 1 V; Reverse Recovery Timen(trr): < 10 ns; Forward Surge Currentn(IFSM): 10 A; Power Dissipationn(PD): 19 W; Switching Speedn(ts): < 10 ns; Minimum Operating Temperature: - 55 °C; Maximum Operating Temperature: 175 °C | GB01SLT12-214 |
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