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GBA-3
Cooper Industries
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1 | Electric Fuse, Fast Blow, 3A, 125VAC, 10000A (IR), Surface Mount | GBA-3 |
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GBA-3
Eaton Corporation
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1 | Electric Fuse, Fast Blow, 3A, 125VAC, 10000A (IR), Surface Mount | GBA-3 |
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RMQC4A3636DGBA-302#AC0
Renesas Electronics
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1 | The RMQC4A3636DGBA is a 1, 048, 576-word by 36-bit and the RMQC4A3618DGBA is a 2, 097, 152-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Sp | BGA | RMQC4A3636DGBA-302#AC0 |
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RMQC4A1836DGBA-302#AC0
Renesas Electronics
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1 | The RMQC4A1836DGBA is a 524, 288-word by 36-bit and the RMQC4A1818DGBA is a 1, 048, 576-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Speed | BGA | RMQC4A1836DGBA-302#AC0 |
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RMQS2A1836DGBA-332#AC0
Renesas Electronics
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1 | The RMQS2A1836DGBA is a 524, 288-word by 36-bit and the RMQS2A1818DGBA is a 1, 048, 576-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Speed | BGA | RMQS2A1836DGBA-332#AC0 |
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RMQS2A3636DGBA-332#AC0
Renesas Electronics
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1 | The RMQS2A3636DGBA is a 1, 048, 576-word by 36-bit and the RMQS2A3618DGBA is a 2, 097, 152-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Sp | BGA | RMQS2A3636DGBA-332#AC0 |
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RMQS2A3618DGBA-332#AC0
Renesas Electronics
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1 | The RMQS2A3636DGBA is a 1, 048, 576-word by 36-bit and the RMQS2A3618DGBA is a 2, 097, 152-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Sp | BGA | RMQS2A3618DGBA-332#AC0 |
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RMQS3A1818DGBA-302#AC0
Renesas Electronics
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1 | The RMQS3A1836DGBA is a 524, 288-word by 36-bit and the RMQS3A1818DGBA is a 1, 048, 576-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Speed | BGA | RMQS3A1818DGBA-302#AC0 |
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RMQS2A1818DGBA-332#AC0
Renesas Electronics
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1 | The RMQS2A1836DGBA is a 524, 288-word by 36-bit and the RMQS2A1818DGBA is a 1, 048, 576-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Speed | BGA | RMQS2A1818DGBA-332#AC0 |
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RMQC4A3618DGBA-302#AC0
Renesas Electronics
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1 | The RMQC4A3636DGBA is a 1, 048, 576-word by 36-bit and the RMQC4A3618DGBA is a 2, 097, 152-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Sp | BGA | RMQC4A3618DGBA-302#AC0 |
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RMQS3A3618DGBA-302#AC0
Renesas Electronics
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1 | The RMQS3A3636DGBA is a 1, 048, 576-word by 36-bit and the RMQS3A3618DGBA is a 2, 097, 152-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Sp | BGA | RMQS3A3618DGBA-302#AC0 |
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RMQS3A1836DGBA-302#AC0
Renesas Electronics
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1 | The RMQS3A1836DGBA is a 524, 288-word by 36-bit and the RMQS3A1818DGBA is a 1, 048, 576-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Speed | BGA | RMQS3A1836DGBA-302#AC0 |
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RMQS3A3636DGBA-302#AC0
Renesas Electronics
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1 | The RMQS3A3636DGBA is a 1, 048, 576-word by 36-bit and the RMQS3A3618DGBA is a 2, 097, 152-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Sp | BGA | RMQS3A3636DGBA-302#AC0 |
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RMQC4A1818DGBA-302#AC0
Renesas Electronics
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1 | The RMQC4A1836DGBA is a 524, 288-word by 36-bit and the RMQC4A1818DGBA is a 1, 048, 576-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Speed | BGA | RMQC4A1818DGBA-302#AC0 |
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GBA-3/4
Eaton Corporation
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1 | Electric Fuse, Fast Blow, 0.75A, 125VAC, 10000A (IR), Surface Mount | GBA-3/4 |
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EHP471K2GBA30X50TA
Hitano Enterprise Corp
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1 | Aluminum Electrolytic Capacitor, Polarized, Aluminum (wet), 400V, 10% +Tol, 10% -Tol, 470uF, Through Hole Mount | EHP471K2GBA30X50TA |
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VS-720-LPD-GBA-350.000
Microsemi Corporation (now Microchip)
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1 | SAW Oscillator, 350MHz Nom | VS-720-LPD-GBA-350.000 |
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SO-720-LPD-GBA-320.000
Microsemi Corporation (now Microchip)
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1 | SAW Oscillator, 320MHz Nom | SO-720-LPD-GBA-320.000 |
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VS-720-LFD-GBA-300.0000
Microsemi Corporation (now Microchip)
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1 | SAW Oscillator, 300MHz Nom | VS-720-LFD-GBA-300.0000 |
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HNT-GA1-203GB-A3270H
Hokuriku Electric Industry Co Ltd
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1 | NTC Thermistor, | HNT-GA1-203GB-A3270H |
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HNT-GA2-203GB-A3270H
Hokuriku Electric Industry Co Ltd
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1 | NTC Thermistor, | HNT-GA2-203GB-A3270H |
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SO-720-LPF-GBA-389.600
Microchip Technology Inc
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1 | SAW Oscillator, 389.6MHz Nom | SO-720-LPF-GBA-389.600 |
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EHL391M2GBA35X50T2
Hitano Enterprise Corp
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1 | Aluminum Electrolytic Capacitor, Polarized, Aluminum (wet), 400V, 20% +Tol, 20% -Tol, 390uF, Through Hole Mount | EHL391M2GBA35X50T2 |
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EAPL3527RGBA3
Everlight Electronics Co Ltd
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1 | Triple Color LED, Brilliant Red/brilliant Green/blue, Colorless Clear Diffused White, 2.64mm | EAPL3527RGBA3 |
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HNT-EC1-103GB-A3950J
Hokuriku Electric Industry Co Ltd
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1 | NTC Thermistor, | HNT-EC1-103GB-A3950J |
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