GP160 Model Download Search Results

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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
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GP160 Amphenol Procom
1 RF/Microwave Antenna GP160 0 Build or Request
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GP1605 C0 Taiwan Semiconductor
1 Rectifiers 16A 600V Standard Re covery Rectifier Transistor Outline, Vertical GP1605 C0 1 Download Model
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GP1608 Jiangsu JieJie Microelectronics Co Ltd
1 GP1606~GP1620 general purpose rectifiers in TO-220C-2L package feature 600 to 2000V repetitive peak reverse voltage, 16A average forward current, glass passivated junction, and lead-free design compliant with EU RoHS. GP1608 0 Build or Request
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GP1606E Jiangsu JieJie Microelectronics Co Ltd
1 GP1606E~GP1620E general purpose rectifiers in TO-263 package feature 600V to 2000V maximum repetitive peak reverse voltage, 16A average forward current, glass passivated junction, and lead-free RoHS compliant construction. GP1606E 0 Build or Request
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GP1608A Jiangsu JieJie Microelectronics Co Ltd
1 GP1606A~GP1610A general purpose rectifiers in TO-220A package feature 600V to 1000V reverse voltage, 16A average forward current, glass passivated junction, and lead-free design compliant with EU RoHS.GP1606A~GP1610A general purpose rectifiers in TO-220A package feature 600 to 1000V repetitive peak reverse voltage, 16A average forward current, glass passivated junction, and lead-free, 94V-0 flammability rated plastic package. GP1608A 0 Build or Request
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GP1606A Jiangsu JieJie Microelectronics Co Ltd
1 GP1606A~GP1610A general purpose rectifiers in TO-220A package feature 600V to 1000V reverse voltage, 16A average forward current, glass passivated junction, and lead-free design compliant with EU RoHS. GP1606A 0 Build or Request
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GP1606 Jiangsu JieJie Microelectronics Co Ltd
1 GP1606~GP1620 general purpose rectifiers in TO-220C-2L package feature 600 to 2000V repetitive peak reverse voltage, 16A average forward current, glass passivated junction, and lead-free design compliant with EU RoHS. GP1606 0 Build or Request
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GP160804-CTC4 CT Micro International Corporation
1 SMD Type Green Emitter GP160804-CTC4 in 0603 package, AlGaInP LED with dominant wavelength 527nm, luminous intensity 225-450 mcd at 5mA, viewing angle ±60 degrees, forward voltage 2.5-3.1V, RoHS compliant. GP160804-CTC4 0 Build or Request
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GP1608X08-B30 CT Micro International Corporation
1 SMD Type Green Emitter GP1608X08-B30 is an InGaN LED with dominant wavelength 525 nm, luminous intensity 500 to 1100 mcd at 20 mA, viewing angle ±65 degrees X axis, and forward voltage 1.9 to 3.4 V. GP1608X08-B30 0 Build or Request
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GP1604C0 Taiwan Semiconductor
1 Rectifier Diode, 1 Phase, 2 Element, 8A, 400V V(RRM), Silicon, TO-220AB GP1604C0 0 Build or Request
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GP1602 Taiwan Semiconductor
1 Rectifier Diode, 1 Phase, 2 Element, 8A, 100V V(RRM), Silicon, TO-220AB GP1602 0 Build or Request
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GP1601 RFE International Inc
1 Rectifier Diode, 1 Phase, 1 Element, 16A, 50V V(RRM), TO-220AB GP1601 0 Build or Request
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GP1603A Taiwan Semiconductor
1 Rectifier Diode, 16A, 200V V(RRM), TO-220AB GP1603A 0 Build or Request
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GP1606D Taiwan Semiconductor
1 Rectifier Diode, 16A, 800V V(RRM), TO-220AB GP1606D 0 Build or Request
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GP1600FSS12 Dynex Semiconductor
1 Insulated Gate Bipolar Transistor, 2100A I(C), 1200V V(BR)CES, N-Channel GP1600FSS12 0 Build or Request
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GP1606C0 Taiwan Semiconductor
1 Rectifier Diode, 1 Phase, 2 Element, 8A, 800V V(RRM), Silicon, TO-220AB GP1606C0 0 Build or Request
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GP1600FSS18-AAB Microsemi Corporation (now Microchip)
1 Insulated Gate Bipolar Transistor, 1600A I(C), 1800V V(BR)CES, N-Channel GP1600FSS18-AAB 0 Build or Request
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GP1601HC0G Taiwan Semiconductor
1 Rectifier Diode, 1 Phase, 2 Element, 8A, 50V V(RRM), Silicon, TO-220AB GP1601HC0G 0 Build or Request
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GP1603C0 Taiwan Semiconductor
1 Rectifier Diode, 1 Phase, 2 Element, 8A, 200V V(RRM), Silicon, TO-220AB GP1603C0 0 Build or Request
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GP1605H Taiwan Semiconductor
1 Rectifier Diode, 1 Phase, 2 Element, 8A, 600V V(RRM), Silicon, TO-220AB GP1605H 0 Build or Request
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GP1602A Taiwan Semiconductor
1 Rectifier Diode, 16A, 100V V(RRM), TO-220AB GP1602A 0 Build or Request
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GP1605HC0G Taiwan Semiconductor
1 Rectifier Diode, 1 Phase, 2 Element, 8A, 600V V(RRM), Silicon, TO-220AB GP1605HC0G 0 Build or Request
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GP1607 Taiwan Semiconductor
1 Rectifier Diode, 1 Phase, 2 Element, 8A, 1000V V(RRM), Silicon, TO-220AB GP1607 0 Build or Request
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GP1603HC0G Taiwan Semiconductor
1 Rectifier Diode, 1 Phase, 2 Element, 8A, 200V V(RRM), Silicon, TO-220AB GP1603HC0G 0 Build or Request
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GP1605 RFE International Inc
1 Rectifier Diode, 1 Phase, 1 Element, 16A, 600V V(RRM), TO-220AB GP1605 0 Build or Request
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