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GS66506T-MR GaN Systems
1 650V, 22.5A, Enhancement mode GaN Transistor, GaNPX® package, Top-side cooled Other GS66506T-MR 1 Download Model
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GS66506T-MR Infineon Technologies AG
1 Power Field-Effect Transistor, 22.5A I(D), 650V, 0.09ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET GS66506T-MR 0 Build or Request
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