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GSFD80R1K3
Suzhou Good-Ark Electronics Co Ltd
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1 | Power Field-Effect Transistor, 4A I(D), 800V, 0.0013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | GSFD80R1K3 |
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GSFD8003
Suzhou Good-Ark Electronics Co Ltd
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1 | Power Field-Effect Transistor, 3A I(D), 800V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | GSFD8003 |
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GSFD8005
Suzhou Good-Ark Electronics Co Ltd
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1 | Power Field-Effect Transistor, 5.5A I(D), 800V, 2.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | GSFD8005 |
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GSFD80R420
Suzhou Good-Ark Electronics Co Ltd
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1 | Power Field-Effect Transistor, 12A I(D), 800V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | GSFD80R420 |
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GSFD80R900
Suzhou Good-Ark Electronics Co Ltd
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1 | Power Field-Effect Transistor, 6A I(D), 800V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | GSFD80R900 |
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