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GT40WR21
Toshiba
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1 | (1) 6.5th generation\r\n(2) The RC-IGBT consists of a freewheeling diode monolithically integrated in an IGBT chip.\r\n(3) Enhancement mode\r\n(4) High-speed switching\r\n IGBT : t\r\nf\r\n = 0.15\r\nµs (typ.) (I\r\nC = 40 A)\r\n FWD : trr = 1.0\r\nµs (typ.) (I\r\nF = 15 A)\r\n(5) Low saturation voltage : VCE(sat) = 2.9 V (typ.) (I\r\nC = 40 A)\r\n(6) High junction temperature : Tj\r\n = 175\r\n (max) | Transistor Outline, Vertical | GT40WR21 |
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GT40WR21,Q(O
Toshiba
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1 | Toshiba GT40WR21,Q(O, IGBT Transistor, 40 A 1800 V, 0.55μs, 3-Pin TO-3P | Transistor Outline, Vertical | GT40WR21,Q(O |
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GT40WR21,Q
Toshiba
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1 | DISCRETE IGBT TRANSISTOR TO-3PN(OS) V=1800 IC=40A | Transistor Outline, Vertical | GT40WR21,Q |
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