HGTG30N60A4D Model Download Search Results

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Image Part Number D.S Description Package Category Prices / Stock Model Action
Part Image Part Image 1 Typical Fall Time. . . . . . . . . . 60ns at TJ = 125&°C; Low Conduction Loss; 100kHz Operation at 390V, 30A; Temperature Compensating SABER™Model; 200kHz Operation at 390V, 18A; 600V Switching SOA Capability Transistor Outline, Vertical HGTG30N60A4D 1 Download Model
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HGTG30N60A4D Intersil Corporation
1 Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247 HGTG30N60A4D 0 Build or Request
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HGTG30N60A4D Rochester Electronics LLC
1 75A, 600V, N-CHANNEL IGBT, TO-247, TO-247, 3 PIN HGTG30N60A4D 0 Build or Request
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HGTG30N60A4D Fairchild Semiconductor Corporation
1 Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247 HGTG30N60A4D 0 Build or Request
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HGTG30N60A4D_NL Fairchild Semiconductor Corporation
1 Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247 HGTG30N60A4D_NL 0 Build or Request
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