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HGTG30N60A4D - onsemi

Description: Typical Fall Time. . . . . . . . . . 60ns at T<sub>J</sub> = 125&°C; Low Conduction Loss; <lt/>100kHz Operation at 390V, 30A; Temperature Compensating SABER<sup>™Model; 200kHz Operation at 390V, 18A; 600V Switching SOA Capability

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Symbol
HGTG30N60A4D - onsemi - PCB symbol
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PCB Footprints
HGTG30N60A4D - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−247−3LD SHORT LEAD-12
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3D Models
HGTG30N60A4D - onsemi - 3D model - Transistor Outline, Vertical - TO−247−3LD SHORT LEAD-12
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HGTG30N60A4D Details

  • Manufacturer Part Number:

    HGTG30N60A4D

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-247-3

  • Manufacturer Package Code:

    340CK

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    22 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    LOW CONDUCTION LOSS

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    75 A

  • Collector-Emitter Voltage-Max:

    600 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    238 ns

  • Turn-on Time-Nom (ton):

    35 ns

HGTG30N60A4D Frequently Asked Questions (FAQs)

  • The maximum allowed case temperature for the HGTG30N60A4D is 125°C, as specified in the datasheet. However, it's recommended to keep the case temperature below 100°C for optimal performance and reliability.
  • To ensure proper cooling, make sure to attach a heat sink to the module, and apply a thin layer of thermal interface material (TIM) between the module and heat sink. Also, ensure good airflow around the heat sink to dissipate heat efficiently.
  • The recommended gate resistance for the HGTG30N60A4D is between 10 ohms and 20 ohms. This helps to reduce electromagnetic interference (EMI) and ensures reliable switching performance.
  • Yes, the HGTG30N60A4D can be used in a parallel configuration to increase the current handling capability. However, it's essential to ensure that the modules are matched in terms of their electrical characteristics, and that the gate drive circuits are properly synchronized to prevent uneven current sharing.
  • The maximum allowed voltage transient for the HGTG30N60A4D is 600 V, as specified in the datasheet. Exceeding this limit can damage the IGBT module.

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HGTG30N60A4D Overview

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