HSBA0 Footprint, Symbol and 3D Model search results

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Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
HSBA045N10 Huashuo	1	N-Ch 100V Fast Switching MOSFETs	Other	HSBA045N10	3D model available Symbol and footprint available 3	1 Download Model
HSBA0018A Huashuo Semiconductor	1	N-ch 100V Fast Switching MOSFET HSBA0018A features 18 mΩ RDS(ON), 55.6 A continuous drain current, advanced trench technology, low gate charge, and 100% EAS guaranteed for high-efficiency synchronous buck converter applications.		HSBA0018A	3D model not available Symbol and footprint not available 0	0 Build or Request
HSBA0903 Huashuo Semiconductor	1	HSBA0903 N-Channel and P-Channel fast switching MOSFETs with 100V drain-source voltage, low RDS(on) of 100mΩ (N-Ch) and 220mΩ (P-Ch), available in PRPAK5 package for power management and DC motor control applications.		HSBA0903	3D model not available Symbol and footprint not available 0	0 Build or Request
HSBA03R0120 Huashuo Semiconductor	1	HSBA03R0120 is a complementary N-channel and P-channel MOSFET pair with 30 V drain-source voltage, 12 mΩ and 29 mΩ on-resistance, high cell density trench technology, suitable for synchronous buck converters.		HSBA03R0120	3D model not available Symbol and footprint not available 0	0 Build or Request

HSBA005N03 Huashuo Semiconductor	1	N-Ch 30V Fast Switching MOSFET with 197A continuous drain current, 0.5 mΩ RDS(ON), 35W power dissipation, and 175°C maximum junction temperature, suitable for motor drivers and DC/DC converters.		HSBA005N03	3D model not available Symbol and footprint not available 0	0 Build or Request
HSBA0040 Huashuo Semiconductor	1	N-channel trench MOSFET with 100 V drain-source voltage, 64 A continuous drain current, 14 mΩ typical RDS(ON), and low gate charge, suitable for synchronous buck converters.		HSBA0040	3D model not available Symbol and footprint not available 0	0 Build or Request
HSBA0204 Huashuo Semiconductor	1	HSBA0204 dual N-channel 100V trench MOSFET with 9.3A continuous drain current, 112mΩ RDS(on), suitable for portable equipment and high-speed switching applications.		HSBA0204	3D model not available Symbol and footprint not available 0	0 Build or Request
HSBA0094 Huashuo Semiconductor	1	HSBA0094 is a high cell density trenched N-channel MOSFET with 100 V drain-source voltage, 34 A continuous drain current, low RDS(ON) of 11.5 mΩ max at VGS = 10 V, and low gate charge, suitable for synchronous rectification in AC/DC quick chargers.		HSBA0094	3D model not available Symbol and footprint not available 0	0 Build or Request
HSBA0715 Huashuo Semiconductor	1	N-Ch 150V Fast Switching MOSFET with 90A continuous drain current, 8.8 mΩ RDS(ON) max, featuring high cell density trench technology, low gate charge, and 100% avalanche rated performance in a PRPAK5*6 package.		HSBA0715	3D model not available Symbol and footprint not available 0	0 Build or Request
HSBA005N04 Huashuo Semiconductor	1	N-channel 40V fast switching MOSFET with 189A continuous drain current, 0.55mΩ RDS(ON), Super Trench technology, in PRPAK5X6 surface-mount package, suitable for motor drivers, DC/DC converters, and power management applications.		HSBA005N04	3D model not available Symbol and footprint not available 0	0 Build or Request
HSBA0048 Huashuo Semiconductor	1	N-Ch 100V Fast Switching MOSFET with 48A continuous drain current, 6.6mΩ RDS(ON) at VGS=10V, low gate charge, and high cell density trench technology for efficient synchronous rectification in AC/DC quick chargers.		HSBA0048	3D model not available Symbol and footprint not available 0	0 Build or Request
HSBA060N10 Huashuo Semiconductor	1	N-Ch 100V Fast Switching MOSFET with 4.6 mΩ RDS(ON), 86 A continuous drain current, low gate charge, and 100% EAS guaranteed, suitable for synchronous rectification in AC/DC quick chargers.		HSBA060N10	3D model not available Symbol and footprint not available 0	0 Build or Request
HSBA0024A Huashuo Semiconductor	1	N-Ch 100V Fast Switching MOSFET with 8.5 mΩ RDS(ON), 104A continuous drain current, available in PRPAK5*6 package, suitable for synchronous buck converters, featuring low gate charge and high cell density trench technology.		HSBA0024A	3D model not available Symbol and footprint not available 0	0 Build or Request
HSBA0195A Huashuo Semiconductor	1	P-Ch 100V Fast Switching MOSFET with -60A continuous drain current, 17mΩ RDS(ON), -100V drain-source voltage, suitable for high frequency switching, DC/DC converters, and power tools applications.		HSBA0195A	3D model not available Symbol and footprint not available 0	0 Build or Request
HSBA0139 Huashuo Semiconductor	1	P-Ch 100V Fast Switching MOSFET with -30A continuous drain current, 42mΩ typical RDS(ON), advanced trench technology, low gate charge, and 100% EAS tested for reliability in high-density power applications.		HSBA0139	3D model not available Symbol and footprint not available 0	0 Build or Request

HSBA0056 Huashuo Semiconductor	1	N-channel 100V fast switching MOSFET with 32A continuous drain current, 20 mΩ maximum RDS(ON), low gate charge, and high-speed switching capability in a PRPAK5X6 package.		HSBA0056	3D model not available Symbol and footprint not available 0	0 Build or Request
101H-SBA0 Attend Technology Inc	1	PCMCIA Connector, 50 Contact(s), 2 Row(s), Female, Straight, 0.05 inch Pitch, Surface Mount Terminal, Plug		101H-SBA0	3D model not available Symbol and footprint not available 0	0 Build or Request
101H-SBA0 Wave Tech Co Ltd	1	PCMCIA Connector, 50 Contact(s), 2 Row(s), Female, Right Angle, 0.05 inch Pitch, Surface Mount Terminal, Plug		101H-SBA0	3D model not available Symbol and footprint not available 0	0 Build or Request

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