HSBA3 Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	HSBA3062 Huashuo	1	N-Ch 30V Fast Switching MOSFETs	Other	HSBA3062	3D model available Symbol and footprint available 3	1 Download Model
	HSBA3115 Huashuo Semiconductor	1	P-Ch 30V Fast Switching MOSFET HSBA3115 features high cell density trench technology, with -59A continuous drain current, 9.8mΩ RDS(ON), and low gate charge, suitable for synchronous buck converters.		HSBA3115	3D model not available Symbol and footprint not available 0	0 Build or Request
	HSBA3903 Huashuo Semiconductor	1	HSBA3903 is a complementary N-channel and P-channel fast switching MOSFET with 30 V drain-source voltage, low RDS(on) of 18 mΩ (N-ch) and 30 mΩ (P-ch), high cell density trench technology, suitable for synchronous buck converters.		HSBA3903	3D model not available Symbol and footprint not available 0	0 Build or Request
	HSBA3048 Huashuo Semiconductor	1	N-channel 30V fast switching MOSFET with 100A continuous drain current, 1.3mΩ typical RDS(ON), low gate charge, and high current capability in a PRPAK5x6 package.		HSBA3048	3D model not available Symbol and footprint not available 0	0 Build or Request

	HSBA3204 Huashuo Semiconductor	1	Dual N-Ch 30V Fast Switching MOSFET with 6.5 mΩ RDS(ON), 35A continuous drain current, 19.2W power dissipation, and low gate charge, suitable for high-density trench applications.		HSBA3204	3D model not available Symbol and footprint not available 0	0 Build or Request
	HSBA3054 Huashuo Semiconductor	1	N-Ch 30V Fast Switching MOSFET with 50 A continuous drain current, 4.5 mΩ typical RDS(ON), low gate charge, and high cell density Trench technology for power management in desktop computers and DC/DC converters.		HSBA3054	3D model not available Symbol and footprint not available 0	0 Build or Request
	HSBA3-100.000MHZ-T MMD	1	Series - 3Rd Overtone Quartz Crystal, 100MHz Nom		HSBA3-100.000MHZ-T	3D model not available Symbol and footprint not available 0	0 Build or Request
	HSBA3031 Huashuo Semiconductor	1	P-Ch 30V MOSFET with -70A continuous drain current, 7.2mΩ RDS(ON), high cell density trench technology, suitable for synchronous buck converters, available in PRPAK5x6 package.		HSBA3031	3D model not available Symbol and footprint not available 0	0 Build or Request
	HSBA3004 Huashuo Semiconductor	1	N-channel 30V fast switching MOSFET with 58A continuous drain current, 8.5mΩ RDS(ON) max, featuring high cell density trench technology, low gate charge, and 100% EAS tested for reliability in power management applications.		HSBA3004	3D model not available Symbol and footprint not available 0	0 Build or Request
	HSBA3060 Huashuo Semiconductor	1	N-Ch 30V Fast Switching MOSFET with 48A continuous drain current, 8mΩ typical RDS(ON), 31W power dissipation, and 65°C/W thermal resistance junction to ambient in PRPAK 5x6 package.		HSBA3060	3D model not available Symbol and footprint not available 0	0 Build or Request
	HSBA3-100.000MHZ MMD	1	Series - 3Rd Overtone Quartz Crystal, 100MHz Nom		HSBA3-100.000MHZ	3D model not available Symbol and footprint not available 0	0 Build or Request
	HSBA3-40.000MHZ-T MMD	1	Series - 3Rd Overtone Quartz Crystal, 40MHz Nom		HSBA3-40.000MHZ-T	3D model not available Symbol and footprint not available 0	0 Build or Request
	HSBA3056 Huashuo Semiconductor	1	N-Ch 30V Fast Switching MOSFET with 73A continuous drain current, 3.2mΩ typical RDS(ON), low gate charge, and high cell density Trench technology for power management and DC/DC converter applications.		HSBA3056	3D model not available Symbol and footprint not available 0	0 Build or Request
	HSBA30P15 Huashuo Semiconductor	1	P-Ch 150V Fast Switching MOSFET with -30A continuous drain current, 56mΩ typical RDS(ON), advanced trench technology, low gate charge, and 100% EAS guaranteed, suitable for high-density power applications.		HSBA30P15	3D model not available Symbol and footprint not available 0	0 Build or Request
	HSBA3016 Huashuo Semiconductor	1	N-Ch 30V Fast Switching MOSFET with 4 mΩ RDS(ON) at VGS = 10V, 108A continuous drain current, advanced trench technology, low gate charge, and 69W power dissipation capability in PRPAK5*6 package.		HSBA3016	3D model not available Symbol and footprint not available 0	0 Build or Request

	HSBA3094 Huashuo Semiconductor	1	N-Ch 30V Fast Switching MOSFET with 1.8 mΩ RDS(ON), 85A continuous drain current, low gate charge, high current capability, and advanced trench technology for power management and DC/DC converters.		HSBA3094	3D model not available Symbol and footprint not available 0	0 Build or Request
	HSBA3103 Huashuo Semiconductor	1	P-Ch 30V Fast Switching MOSFET with -35A continuous drain current, 20mΩ RDS(ON), low gate charge, and high cell density trench technology for synchronous buck converter applications.		HSBA3103	3D model not available Symbol and footprint not available 0	0 Build or Request
	HSBA3119 Huashuo Semiconductor	1	P-Ch 30V Fast Switching MOSFET with -130A continuous drain current, 2.0mΩ RDS(ON), low gate charge, and 100% EAS tested, suitable for synchronous buck converters in PRPAK5x6 package.		HSBA3119	3D model not available Symbol and footprint not available 0	0 Build or Request
	HSBA3-40.000MHZ MMD	1	Series - 3Rd Overtone Quartz Crystal, 40MHz Nom		HSBA3-40.000MHZ	3D model not available Symbol and footprint not available 0	0 Build or Request
	HSBA3050 Huashuo Semiconductor	1	N-channel 30V fast switching MOSFET with 75A continuous drain current, 3mΩ typical RDS(ON), low gate charge, and 50W power dissipation in a PRPAK 5x6 package.		HSBA3050	3D model not available Symbol and footprint not available 0	0 Build or Request
	HSBA3202 Huashuo Semiconductor	1	Dual N-Ch 30V MOSFET in PRPAK5x6 package with 35A continuous drain current, 15mΩ RDS(ON) at 10V VGS, featuring low gate charge and high cell density trench technology for efficient power conversion.		HSBA3202	3D model not available Symbol and footprint not available 0	0 Build or Request
	HSBA3018B Huashuo Semiconductor	1	N-Ch 30V Fast Switching MOSFET with 2 mΩ RDS(ON), 85A continuous drain current, super low gate charge, and 100% EAS tested, suitable for synchronous buck converters.		HSBA3018B	3D model not available Symbol and footprint not available 0	0 Build or Request
	HSBA3006 Huashuo Semiconductor	1	N-Ch 30V Fast Switching MOSFET with 81A continuous drain current, 5.5mΩ RDS(ON), low gate charge, and 100% EAS tested for reliable power conversion applications.		HSBA3006	3D model not available Symbol and footprint not available 0	0 Build or Request
	HSBA3014 Huashuo Semiconductor	1	N-Ch 30V Fast Switching MOSFET with 150 A continuous drain current, 12 mΩ RDS(ON), high cell density trench technology, suitable for synchronous buck converters, available in PRPAK 5x6 package.		HSBA3014	3D model not available Symbol and footprint not available 0	0 Build or Request
	HSBA3086 Huashuo Semiconductor	1	N-Ch 30V Fast Switching MOSFET with 0.7 mΩ RDS(ON), 230 A continuous drain current, 89 W power dissipation, and 65 nC gate charge, suitable for power management and DC/DC converters.		HSBA3086	3D model not available Symbol and footprint not available 0	0 Build or Request
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