IGB07 Model Download Search Results
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IGB070S10S1XTMA1
Infineon
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1 | GaN FETs CoolGaN Transistor 100 V G3 in PQFN 3x3, 5 mohm | Other | IGB070S10S1XTMA1 |
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IGB070S10S1
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 38A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET | IGB070S10S1 |
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![Part Image](["https://componentsearchengine.com/2D/0/20818013.png",null,null])
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