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Image Part Number D.S Description Package Category Prices / Stock Model Action
Part Image Part Image 1 IGBT Trench 600 V 8 A 42 W Through Hole PG-TO251-3 Other IGU04N60TAKMA1 1 Download Model
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IGU04N60T Infineon Technologies AG
1 Insulated Gate Bipolar Transistor, 9.5A I(C), 600V V(BR)CES, N-Channel, TO-251 IGU04N60T 0 Build or Request
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