IMZA6 Model Download Search Results

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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
Part Image Part Image 1 CoolSiC™ MOSFET 650V – SiC MOSFET delivering reliable and cost-effective performance in TO247 4-pin package Other IMZA65R107M1HXKSA1 1 Download Model
Part Image Part Image 1 N-Channel 650 V 38A (Tc) 153W (Tc) Through Hole PG-TO247-4-8 Other IMZA65R050M2HXKSA1 1 Download Model
Part Image Part Image 1 N-Channel 650 V 83A (Tc) 273W (Tc) Through Hole PG-TO247-4-8 Other IMZA65R020M2HXKSA1 1 Download Model
Part Image Part Image 1 650V CoolSiC M1SiC Trench Power Device Other IMZA65R048M1HXKSA1 1 Download Model
Part Image Part Image 1 CoolSiC™ MOSFET 650V – SiC MOSFET delivering reliable and cost-effective performance in TO247 4-pin package Other IMZA65R030M1HXKSA1 1 Download Model
Part Image Part Image 1 CoolSiC™ MOSFET 650V – SiC MOSFET delivering reliable and cost-effective performance in TO247 4-pin package Other IMZA65R027M1HXKSA1 1 Download Model
Part Image Part Image 1 N-Channel 650 V 53A (Tc) 194W (Tc Through Hole PG-TO247-4-8 , 650 V , -55°C ~ 175°C Other IMZA65R033M2HXKSA1 1 Download Model
Part Image Part Image 1 CoolSiC™ MOSFET 650V – SiC MOSFET delivering reliable and cost-effective performance in TO247 4-pin package Other IMZA65R083M1HXKSA1 1 Download Model
Part Image Part Image 1 CoolSiC™ MOSFET 650V – SiC MOSFET delivering reliable and cost-effective performance in TO247 4-pin package Other IMZA65R039M1HXKSA1 1 Download Model
Part Image Part Image 1 N-Channel 650 V 210A (Tc) 625W (Tc) Through Hole PG-TO247-4-U02 Other IMZA65R007M2HXKSA1 1 Download Model
Part Image Part Image 1 Silicon Carbide MOSFET, Single, N Channel, 64 A, 650 V, 0.033 ohm, TO-247 Other IMZA65R026M2HXKSA1 1 Download Model
Part Image Part Image 1 CoolSiC™ MOSFET 650V – SiC MOSFET delivering reliable and cost-effective performance in TO247 4-pin package Other IMZA65R057M1HXKSA1 1 Download Model
Part Image Part Image 1 CoolSiC™ MOSFET 650V – SiC MOSFET delivering reliable and cost-effective performance in TO247 4-pin package Other IMZA65R072M1HXKSA1 1 Download Model
Part Image Part Image 1 N-Channel 650 V 46A (Tc) 172W (Tc) Through Hole PG-TO247-4-8 Other IMZA65R040M2HXKSA1 1 Download Model
Part Image Part Image 1 N-Channel 650 V 32.8A (Tc) 130W (Tc) Through Hole PG-TO247-4-8 669 pF 55mOhm -55°C ~ 175°C (TJ) Other IMZA65R060M2HXKSA1 1 Download Model
Part Image Part Image 1 N-Channel 650 V 103A (Tc) 341W (Tc) Through Hole PG-TO247-4-8 Other IMZA65R015M2HXKSA1 1 Download Model
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IMZA65R027M1H Infineon Technologies AG
1 Power Field-Effect Transistor, 59A I(D), 650V, 0.034ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247 IMZA65R027M1H 0 Build or Request
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IMZA65R039M1H Infineon Technologies AG
1 Power Field-Effect Transistor, 50A I(D), 650V, 0.05ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247 IMZA65R039M1H 0 Build or Request
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IMZA65R107M1H Infineon Technologies AG
1 Power Field-Effect Transistor, 20A I(D), 650V, 0.142ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247 IMZA65R107M1H 0 Build or Request
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IMZA65R048M1H Infineon Technologies AG
1 Power Field-Effect Transistor, 39A I(D), 650V, 0.064ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247 IMZA65R048M1H 0 Build or Request
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IMZA65R057M1H Infineon Technologies AG
1 Power Field-Effect Transistor, 35A I(D), 650V, 0.074ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247 IMZA65R057M1H 0 Build or Request
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IMZA65R083M1H Infineon Technologies AG
1 Power Field-Effect Transistor, 26A I(D), 650V, 0.111ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247 IMZA65R083M1H 0 Build or Request
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IMZA65R030M1H Infineon Technologies AG
1 Power Field-Effect Transistor, 53A I(D), 650V, 0.042ohm, 1-Element, N-Channel, Silicon Carbide, Trench Mosfet FET, TO-247 IMZA65R030M1H 0 Build or Request
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IMZA65R072M1H Infineon Technologies AG
1 Power Field-Effect Transistor, 28A I(D), 650V, 0.094ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247 IMZA65R072M1H 0 Build or Request
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SP005398433 Infineon Technologies AG
1 Power Field-Effect Transistor, 39A I(D), 650V, 0.064ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247 SP005398433 0 Build or Request
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