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IMZA65R027M1H Infineon Technologies AG
1 Power Field-Effect Transistor, 59A I(D), 650V, 0.034ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247 IMZA65R027M1H 0 Build or Request
Part Image Part Image 1 CoolSiC™ MOSFET 650V – SiC MOSFET delivering reliable and cost-effective performance in TO247 4-pin package Other IMZA65R027M1HXKSA1 1 Download Model
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