IPB07 Model Download Search Results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	IPB072N15N3GATMA1 Infineon	1	N-Channel 150 V 100A (Tc) 300W (Tc) Surface Mount PG-TO263-3-2 , -55°C ~ 175°C (TJ)	Other	IPB072N15N3GATMA1	3D model not available Symbol and footprint available 2	1 Download Model
	IPB073N15N5ATMA1 Infineon	1	N-Channel 150 V 114A (Tc) 214W (Tc) Surface Mount PG-TO263-3-2	Other	IPB073N15N5ATMA1	3D model available Symbol and footprint available 3	1 Download Model
	IPB072N15N3 G Infineon	1	Infineon IPB072N15N3 G N-channel MOSFET, 100 A, 150 V OptiMOS 3, 3-Pin D2PAK	Other	IPB072N15N3 G	3D model available Symbol and footprint available 3	1 Download Model
	IPB07N03L Infineon Technologies AG	1	Power Field-Effect Transistor, 80A I(D), 30V, 0.0097ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		IPB07N03L	3D model not available Symbol and footprint not available 0	0 Build or Request

	IPB070N06LGATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 80A I(D), 60V, 0.0067ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		IPB070N06LGATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB075N04LGATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 50A I(D), 40V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		IPB075N04LGATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB072N15N3GE8187 Infineon Technologies AG	1	Power Field-Effect Transistor, 100A I(D), 150V, 0.0072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		IPB072N15N3GE8187	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB075N04LG Infineon Technologies AG	1	Power Field-Effect Transistor, 50A I(D), 40V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		IPB075N04LG	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB070N06NG Infineon Technologies AG	1	Power Field-Effect Transistor, 80A I(D), 60V, 0.0067ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		IPB070N06NG	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB072N15N3G Infineon Technologies AG	1	Power Field-Effect Transistor, 100A I(D), 150V, 0.0072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		IPB072N15N3G	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB073N15N5 Infineon Technologies AG	1	Power Field-Effect Transistor, 114A I(D), 150V, 0.0073ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		IPB073N15N5	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB070N06NGATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 80A I(D), 60V, 0.0067ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		IPB070N06NGATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB072N15N3GXT Infineon Technologies AG	1	Power Field-Effect Transistor, 100A I(D), 150V, 0.0072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		IPB072N15N3GXT	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB070N06LG Infineon Technologies AG	1	Power Field-Effect Transistor, 80A I(D), 60V, 0.0067ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		IPB070N06LG	3D model not available Symbol and footprint not available 0	0 Build or Request

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