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IPB072N15N3 G
Infineon
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1 | Infineon IPB072N15N3 G N-channel MOSFET, 100 A, 150 V OptiMOS 3, 3-Pin D2PAK | Other | IPB072N15N3 G |
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IPB072N15N3GATMA1
Infineon
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1 | Power Field-Effect Transistor, 100A I(D), 150V, 0.0072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | IPB072N15N3GATMA1 |
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IPB072N15N3G
Infineon
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1 | Power Field-Effect Transistor, 100A I(D), 150V, 0.0072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | IPB072N15N3G |
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Build or Request | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB072N15N3GATMA1
* Other *
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1 | IPB072N15N3GATMA1 |
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IPB072N15N3GXT
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 100A I(D), 150V, 0.0072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | IPB072N15N3GXT |
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IPB072N15N3GE8187
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 100A I(D), 150V, 0.0072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | IPB072N15N3GE8187 |
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Build or Request |