IPB123N10N3G Model Download Search Results
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IPB123N10N3G
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 58A I(D), 100V, 0.0123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | IPB123N10N3G |
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IPB123N10N3GATMA1
Infineon
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1 | IPB123N10N3GATMA1 N-Channel MOSFET, 58 A, 100 V OptiMOS 3, 3-Pin D2PAK Infineon | Other | IPB123N10N3GATMA1 |
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IPB123N10N3GXT
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 58A I(D), 100V, 0.0123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | IPB123N10N3GXT |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/d2pak_4.jpg"])
![Part Image](["https://media.rs-online.com/t_large/R9110913-01.jpg",null,"//content.supplyframe.com/images/process/fit-in/100x100/p/d2pak_4.jpg"])
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