IPS50 Model Download Search Results
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IPS50R520CPBKMA1
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 7.1A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | IPS50R520CPBKMA1 |
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IPS50R520CPXK
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 7.1A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | IPS50R520CPXK |
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IPS50R520CPAT
Infineon Technologies AG
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1 | Power Field-Effect Transistor | IPS50R520CPAT |
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IPS50R520CPAKMA1
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 7.1A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | IPS50R520CPAKMA1 |
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IPS50R520CPBT
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 7.1A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | IPS50R520CPBT |
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IPS50R520CP
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 7.1A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | IPS50R520CP |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/to251_3.jpg"])
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