IPU09 Model Download Search Results
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IPU09N03LA
Infineon
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1 | N-Channel 25V 50A (Tc) 63W (Tc) Through Hole PG-TO251-3 | Transistor Outline, Vertical | IPU09N03LA |
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IPU090N03LG
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 40A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | IPU090N03LG |
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IPU09N03LAG
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 50A I(D), 25V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | IPU09N03LAG |
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IPU090N03LGBKMA1
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 40A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | IPU090N03LGBKMA1 |
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IPU09N03LAGBKMA1
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 50A I(D), 25V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | IPU09N03LAGBKMA1 |
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IPU09N03LBG
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 50A I(D), 30V, 0.0144ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | IPU09N03LBG |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/to251_3.jpg"])
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