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Image Part Number D.S Description Package Category Prices / Stock Model Action
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1 MOSFETs IFX FET 15V-30V Other IQE008N03LM5SCATMA1 1 Download Model
Part Image Part Image 1 MOSFET Other IQE004NE1LM7ATMA1 1 Download Model
Part Image Part Image 1 MOSFET OptiMOSTM5Power-Transistor,25V Other IQE006NE2LM5ATMA1 1 Download Model
Part Image Part Image 1 MOSFETs TRENCH <= 40V Other IQE004NE1LM7CGSCATMA1 1 Download Model
Part Image Part Image 1 Power MOSFET, N Channel, 25 V, 310 A, 490 µohm, SON, Surface Mount Other IQE006NE2LM5SCATMA1 1 Download Model
Part Image Part Image 1 N-Channel 30 V 27A (Ta), 253A (Tc) 2.1W (Ta), 89W (Tc) Surface Mount PG-TSON-8-4 Other IQE008N03LM5ATMA1 1 Download Model
Part Image Part Image 1 OPTIMOS 25V LOW-VOLTAGE POWER MOSFET IN PQFN 3.3X3.3 SOURCE-DOWN CENTER-GATE PACKAGE WITH INDUSTRY LEADING RDS(ON) - Trays Other IQE006NE2LM5CGATMA1 1 Download Model
Part Image Part Image 1 OptiMOS™ low-voltage power MOSFET 30 V in PQFN 3.3x3.3 Source-Down Center-Gate DSC package Other IQE008N03LM5CGSCATMA1 1 Download Model
Part Image Part Image 1 Trans MOSFET N-CH 25V 47A 9-Pin WHTFN EP T/R Other IQE006NE2LM5CGSCATMA1 1 Download Model
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IQE006NE2LM5CG Infineon Technologies AG
1 Power Field-Effect Transistor IQE006NE2LM5CG 0 Build or Request
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IQE004NE1LM7 Infineon Technologies AG
1 Power Field-Effect Transistor, 379A I(D), 15V, 0.00045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET IQE004NE1LM7 0 Build or Request
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IQE006NE2LM5CGSC Infineon Technologies AG
1 Power Field-Effect Transistor, 310A I(D), 25V, 0.00075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET IQE006NE2LM5CGSC 0 Build or Request
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IQE006NE2LM5 Infineon Technologies AG
1 Power Field-Effect Transistor, 298A I(D), 25V, 0.0008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET IQE006NE2LM5 0 Build or Request
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IQE004NE1LM7CG Infineon Technologies AG
1 Power Field-Effect Transistor, 379A I(D), 15V, 0.00045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET IQE004NE1LM7CG 0 Build or Request
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IQE004NE1LM7SC Infineon Technologies AG
1 Power Field-Effect Transistor, 379A I(D), 15V, 0.00045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET IQE004NE1LM7SC 0 Build or Request
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IQE004NE1LM7CGSC Infineon Technologies AG
1 Power Field-Effect Transistor, 379A I(D), 15V, 0.00045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET IQE004NE1LM7CGSC 0 Build or Request
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